3C-SiC material parameters for accurate TCAD modeling and simulation

Anastasios Arvanitopoulos; Samuel Perkins; Konstantinos N. Gyftakis; Marina Antoniou; Neophytos Lophitis

3C-SiC material parameters for accurate TCAD modeling and simulation

Anastasios Arvanitopoulos, Samuel Perkins, Konstantinos N. Gyftakis, Marina Antoniou, Neophytos Lophitis

University of Cambridge

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Abstract

With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest.
Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices.

Original language	English
Title of host publication	The 10th International Conference on Silicon Epitaxy and Heterostructures
Subtitle of host publication	ICSI-10
Pages	115-116
Number of pages	2
Publication status	Published - May 2017
Event	The 10th International Conference on Silicon Epitaxy and Heterostructures - The University of Warwick, Coventry, United Kingdom Duration: 14 May 2017 → 19 May 2017 Conference number: 10 http://www2.warwick.ac.uk/fac/cross_fac/icsi-10/

Conference

Conference	The 10th International Conference on Silicon Epitaxy and Heterostructures
Abbreviated title	ICSI
Country/Territory	United Kingdom
City	Coventry
Period	14/05/17 → 19/05/17
Internet address	http://www2.warwick.ac.uk/fac/cross_fac/icsi-10/

Keywords

Semiconductor material models
Wide bandgap semiconductors
Technology Computer Aided Design
TCAD
Silicon Carbide

Cite this

@inproceedings{9474454a743e4728ae9e02ee4ff9a160,

title = "3C-SiC material parameters for accurate TCAD modeling and simulation",

abstract = "With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest. Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices. ",

keywords = "Semiconductor material models, Wide bandgap semiconductors, Technology Computer Aided Design, TCAD, Silicon Carbide",

author = "Anastasios Arvanitopoulos and Samuel Perkins and Gyftakis, {Konstantinos N.} and Marina Antoniou and Neophytos Lophitis",

year = "2017",

month = may,

language = "English",

pages = "115--116",

booktitle = "The 10th International Conference on Silicon Epitaxy and Heterostructures",

note = "The 10th International Conference on Silicon Epitaxy and Heterostructures, ICSI ; Conference date: 14-05-2017 Through 19-05-2017",

url = "http://www2.warwick.ac.uk/fac/cross_fac/icsi-10/",

}

TY - GEN

T1 - 3C-SiC material parameters for accurate TCAD modeling and simulation

AU - Arvanitopoulos, Anastasios

AU - Perkins, Samuel

AU - Gyftakis, Konstantinos N.

AU - Antoniou, Marina

AU - Lophitis, Neophytos

N1 - Conference code: 10

PY - 2017/5

Y1 - 2017/5

N2 - With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest. Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices.

AB - With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest. Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices.

KW - Semiconductor material models

KW - Wide bandgap semiconductors

KW - Technology Computer Aided Design

KW - TCAD

KW - Silicon Carbide

M3 - Conference proceeding

SP - 115

EP - 116

BT - The 10th International Conference on Silicon Epitaxy and Heterostructures

T2 - The 10th International Conference on Silicon Epitaxy and Heterostructures

Y2 - 14 May 2017 through 19 May 2017

ER -

3C-SiC material parameters for accurate TCAD modeling and simulation

Abstract

Conference

Keywords

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Cite this