3C-SiC material parameters for accurate TCAD modeling and simulation

Anastasios Arvanitopoulos, Samuel Perkins, Konstantinos N. Gyftakis, Marina Antoniou, Neophytos Lophitis

Abstract

With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest.
Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices.
Original languageEnglish
Title of host publicationThe 10th International Conference on Silicon Epitaxy and Heterostructures
Subtitle of host publicationICSI-10
Pages115-116
Number of pages2
StatePublished - May 2017
EventThe 10th International Conference on Silicon Epitaxy and Heterostructures - Coventry, United Kingdom

Conference

ConferenceThe 10th International Conference on Silicon Epitaxy and Heterostructures
Abbreviated titleICSI
CountryUnited Kingdom
CityCoventry
Period14/05/1719/05/17
Internet address

Fingerprint

Silicon carbide
Computer aided design
Gallium nitride
Electronics industry
Power electronics
Materials properties
Energy gap
Silicon
Costs

Keywords

  • Semiconductor material models
  • Wide bandgap semiconductors
  • Technology Computer Aided Design
  • TCAD
  • Silicon Carbide

Cite this

Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Antoniou, M., & Lophitis, N. (2017). 3C-SiC material parameters for accurate TCAD modeling and simulation. In The 10th International Conference on Silicon Epitaxy and Heterostructures: ICSI-10 (pp. 115-116)

3C-SiC material parameters for accurate TCAD modeling and simulation. / Arvanitopoulos, Anastasios; Perkins, Samuel; Gyftakis, Konstantinos N.; Antoniou, Marina; Lophitis, Neophytos.

The 10th International Conference on Silicon Epitaxy and Heterostructures: ICSI-10. 2017. p. 115-116.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Arvanitopoulos, A, Perkins, S, Gyftakis, KN, Antoniou, M & Lophitis, N 2017, 3C-SiC material parameters for accurate TCAD modeling and simulation. in The 10th International Conference on Silicon Epitaxy and Heterostructures: ICSI-10. pp. 115-116, The 10th International Conference on Silicon Epitaxy and Heterostructures, Coventry, United Kingdom, 14-19 May.
Arvanitopoulos A, Perkins S, Gyftakis KN, Antoniou M, Lophitis N. 3C-SiC material parameters for accurate TCAD modeling and simulation. In The 10th International Conference on Silicon Epitaxy and Heterostructures: ICSI-10. 2017. p. 115-116.

Arvanitopoulos, Anastasios; Perkins, Samuel; Gyftakis, Konstantinos N.; Antoniou, Marina; Lophitis, Neophytos / 3C-SiC material parameters for accurate TCAD modeling and simulation.

The 10th International Conference on Silicon Epitaxy and Heterostructures: ICSI-10. 2017. p. 115-116.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

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abstract = "With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest. Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices.",
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AU - Lophitis,Neophytos

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