Accepting PhD Students

20132022
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Research Output 2013 2019

  • 8 Conference proceeding
  • 8 Article
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Article
2019
14 Downloads (Pure)

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr, S., Poluri, N., Igic, P., Jankovic, N. & De Souza, M. M., Oct 2019, In : IEEE Transactions on Electron Devices. 66, 10, p. 4367 - 4372 6 p.

Research output: Contribution to journalArticle

Open Access
File
Gallium nitride
High electron mobility transistors
Transducers
Magnetic flux
Geometry
2 Citations (Scopus)
22 Downloads (Pure)

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Thomas, B., Faramehr, S., Moody, D., Evans, J., Elwin, M. & Igic, P., 8 Mar 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1937 - 1941 5 p., 8663610.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Gallium nitride
Magnetic field effects
Field effect transistors
Temperature
2018
2 Citations (Scopus)

Analysis of GaN MagHEMTs

Faramehr, S., Jankovic, N. & Igic, P., 17 Aug 2018, In : Semiconductor Science and Technology. 33, 9, 095015.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
sensitivity
4 Citations (Scopus)
24 Downloads (Pure)

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Igic, P., Jankovic, N., Evans, J., Elwin, M., Batcup, S. & Faramehr, S., May 2018, In : IEEE Electron Device Letters. 39, 5, p. 746 - 748 3 p., 5.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Two dimensional electron gas
Magnetic fields
Electrons
Sensors
2017
2 Citations (Scopus)

Analysis of GaN HEMTs Switching Transients Using Compact Model

Faramehr, S. & Igic, P., 18 May 2017, In : IEEE Transactions on Electron Devices. 64, 7, p. 2900 - 2905 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Energy dissipation
Computer aided design
Networks (circuits)
Power HEMT
2 Citations (Scopus)

Operational frequency degradation induced trapping in scaled GaN HEMTs

Ubochi, B., Faramehr, S., Ahmeda, K., Igic, P. & Kalna, K., Apr 2017, In : Microelectronics Reliability. 71, p. 35-40 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
trapping
Cutoff frequency
degradation
2014

Design and simulation of a novel 1400V-4000V enhancement mode buried gate GaN HEMT for power applications

Faramehr, S., Kalna, K. & Igic, P., 26 Sep 2014, In : Semiconductor Science and Technology. 29, 11, p. 115020 7 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
Electric breakdown
27 Citations (Scopus)
38 Downloads (Pure)
Open Access
File
High electron mobility transistors
high electron mobility transistors
Hydrodynamics
hydrodynamics
traps