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Soroush Faramehr

Dr

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Accepting PhD Students

20132020

Research activity per year

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  • 2020

    Enhanced Fast Frequency Support Schemes

    Balasubramaniam, S., Faramehr, S., Igic, P., Adeuyi, O. D., Ugalde-Loo, C. E., Joseph, T. & Liang, J., 16 Dec 2020, 2020 IEEE Power and Energy Society General Meeting, PESGM 2020. IEEE, 5 p. 9281764. (IEEE Power and Energy Society General Meeting; vol. 2020-August).

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

  • 2019

    GaN Current Transducers for Harsh Environments

    Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

  • 2018

    Analysis of GaN MagFETs compatible with RF power technology

    Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    Open Access
    File
    12 Downloads (Pure)
  • 2017

    High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

    Igic, P., Kryvchenkova, O., Faramehr, S., Batcup, S. & Jankovic, N., 14 Dec 2017, 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 55-59 5 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    1 Citation (Scopus)
  • Simulation of Solo GaN IGBTs

    Faramehr, S. & Igic, P., 14 Dec 2017, IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 75-78 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    3 Citations (Scopus)
  • The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

    Ahmeda, K., Faramehr, S., Igic, P., Kalna, K., Duffy, S. J., Solatni, A. & Benbakhti, B., 5 Jan 2017, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, p. 203-206 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

  • 2014

    Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

    Faramehr, S., Kalna, K. & Igic, P., 26 Jun 2014, 29th International Conference on Microelectronics Proceedings - MIEL 2014. IEEE, p. 81-84 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    5 Citations (Scopus)
  • Modelling and optimization of GaN capped HEMTs

    Faramehr, S., Igic, P. & Kalna, K., 29 Dec 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems . Breza, J., Donoval, D. & Vavrinský, E. (eds.). IEEE, p. 1-4 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    2 Citations (Scopus)
  • 2013

    TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

    Faramehr, S., Igic, P. & Kalna, K., 24 Jan 2013, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems . IEEE, p. 11-14 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    Open Access
    File
    2 Citations (Scopus)
    13 Downloads (Pure)
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