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20132022
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Research Output 2013 2019

  • 8 Conference proceeding
  • 8 Article
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Conference proceeding
2019

GaN Current Transducers for Harsh Environments

Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
high electron mobility transistors
ambient temperature
transducers
sensitivity
2018
3 Downloads (Pure)

Analysis of GaN MagFETs compatible with RF power technology

Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
gallium nitrides
sensitivity
high electron mobility transistors
ambient temperature
field effect transistors
2017
1 Citation (Scopus)

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Igic, P., Kryvchenkova, O., Faramehr, S., Batcup, S. & Jankovic, N., 14 Dec 2017, 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 55-59 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

SOI (semiconductors)
sensitivity
sensors
silicon
high electron mobility transistors
1 Citation (Scopus)

Simulation of Solo GaN IGBTs

Faramehr, S. & Igic, P., 14 Dec 2017, IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 75-78 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
bipolar transistors
punches
simulation
electrical faults

The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Ahmeda, K., Faramehr, S., Igic, P., Kalna, K., Duffy, S. J., Solatni, A. & Benbakhti, B., 5 Jan 2017, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, p. 203-206 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

heterojunctions
heating
polarization
transmission lines
electric contacts
2014
4 Citations (Scopus)

Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Faramehr, S., Kalna, K. & Igic, P., 26 Jun 2014, 29th International Conference on Microelectronics Proceedings - MIEL 2014. IEEE, p. 81-84 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

high electron mobility transistors
carrier mobility
spacers
transistors
traps
2 Citations (Scopus)

Modelling and optimization of GaN capped HEMTs

Faramehr, S., Igic, P. & Kalna, K., 29 Dec 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems . Breza, J., Donoval, D. & Vavrinský, E. (eds.). IEEE, p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

high electron mobility transistors
caps
optimization
electrical faults
simulation
2013
2 Citations (Scopus)
2 Downloads (Pure)

TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Faramehr, S., Igic, P. & Kalna, K., 24 Jan 2013, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems . IEEE, p. 11-14 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
high electron mobility transistors
trapping
traps
electron tunneling
electrons