Accepting PhD Students

20132022
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Research Output 2013 2019

  • 8 Conference proceeding
  • 8 Article
2019
14 Downloads (Pure)

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr, S., Poluri, N., Igic, P., Jankovic, N. & De Souza, M. M., Oct 2019, In : IEEE Transactions on Electron Devices. 66, 10, p. 4367 - 4372 6 p.

Research output: Contribution to journalArticle

Open Access
File
Gallium nitride
High electron mobility transistors
Transducers
Magnetic flux
Geometry

GaN Current Transducers for Harsh Environments

Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
high electron mobility transistors
ambient temperature
transducers
sensitivity
2 Citations (Scopus)
22 Downloads (Pure)

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Thomas, B., Faramehr, S., Moody, D., Evans, J., Elwin, M. & Igic, P., 8 Mar 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1937 - 1941 5 p., 8663610.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Gallium nitride
Magnetic field effects
Field effect transistors
Temperature
2018
6 Downloads (Pure)

Analysis of GaN MagFETs compatible with RF power technology

Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
gallium nitrides
sensitivity
high electron mobility transistors
ambient temperature
field effect transistors
2 Citations (Scopus)

Analysis of GaN MagHEMTs

Faramehr, S., Jankovic, N. & Igic, P., 17 Aug 2018, In : Semiconductor Science and Technology. 33, 9, 095015.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
sensitivity
4 Citations (Scopus)
24 Downloads (Pure)

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Igic, P., Jankovic, N., Evans, J., Elwin, M., Batcup, S. & Faramehr, S., May 2018, In : IEEE Electron Device Letters. 39, 5, p. 746 - 748 3 p., 5.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Two dimensional electron gas
Magnetic fields
Electrons
Sensors
2017
2 Citations (Scopus)

Analysis of GaN HEMTs Switching Transients Using Compact Model

Faramehr, S. & Igic, P., 18 May 2017, In : IEEE Transactions on Electron Devices. 64, 7, p. 2900 - 2905 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Energy dissipation
Computer aided design
Networks (circuits)
Power HEMT
1 Citation (Scopus)

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Igic, P., Kryvchenkova, O., Faramehr, S., Batcup, S. & Jankovic, N., 14 Dec 2017, 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 55-59 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

SOI (semiconductors)
sensitivity
sensors
silicon
high electron mobility transistors
2 Citations (Scopus)

Operational frequency degradation induced trapping in scaled GaN HEMTs

Ubochi, B., Faramehr, S., Ahmeda, K., Igic, P. & Kalna, K., Apr 2017, In : Microelectronics Reliability. 71, p. 35-40 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
trapping
Cutoff frequency
degradation
1 Citation (Scopus)

Simulation of Solo GaN IGBTs

Faramehr, S. & Igic, P., 14 Dec 2017, IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 75-78 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
bipolar transistors
punches
simulation
electrical faults

The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Ahmeda, K., Faramehr, S., Igic, P., Kalna, K., Duffy, S. J., Solatni, A. & Benbakhti, B., 5 Jan 2017, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, p. 203-206 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

heterojunctions
heating
polarization
transmission lines
electric contacts
2014

Design and simulation of a novel 1400V-4000V enhancement mode buried gate GaN HEMT for power applications

Faramehr, S., Kalna, K. & Igic, P., 26 Sep 2014, In : Semiconductor Science and Technology. 29, 11, p. 115020 7 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
Electric breakdown
27 Citations (Scopus)
38 Downloads (Pure)
Open Access
File
High electron mobility transistors
high electron mobility transistors
Hydrodynamics
hydrodynamics
traps
4 Citations (Scopus)

Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Faramehr, S., Kalna, K. & Igic, P., 26 Jun 2014, 29th International Conference on Microelectronics Proceedings - MIEL 2014. IEEE, p. 81-84 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

high electron mobility transistors
carrier mobility
spacers
transistors
traps
2 Citations (Scopus)

Modelling and optimization of GaN capped HEMTs

Faramehr, S., Igic, P. & Kalna, K., 29 Dec 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems . Breza, J., Donoval, D. & Vavrinský, E. (eds.). IEEE, p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

high electron mobility transistors
caps
optimization
electrical faults
simulation
2013
2 Citations (Scopus)
5 Downloads (Pure)

TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Faramehr, S., Igic, P. & Kalna, K., 24 Jan 2013, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems . IEEE, p. 11-14 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
high electron mobility transistors
trapping
traps
electron tunneling
electrons