Accepting PhD Students

20132022
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Research Output 2013 2019

  • 8 Conference proceeding
  • 8 Article
2019
5 Downloads (Pure)

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr, S., Poluri, N., Igic, P., Jankovic, N. & De Souza, M. M., 30 Aug 2019, In : IEEE Transactions on Electron Devices. (In-press), p. (In-press) 6 p.

Research output: Contribution to journalArticle

Open Access
File
Gallium nitride
High electron mobility transistors
Transducers
Magnetic flux
Geometry

GaN Current Transducers for Harsh Environments

Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
high electron mobility transistors
ambient temperature
transducers
sensitivity
1 Citation (Scopus)
13 Downloads (Pure)

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Thomas, B., Faramehr, S., Moody, D., Evans, J., Elwin, M. & Igic, P., 8 Mar 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1937 - 1941 5 p., 8663610.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Gallium nitride
Magnetic field effects
Field effect transistors
Temperature
2018
3 Downloads (Pure)

Analysis of GaN MagFETs compatible with RF power technology

Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
gallium nitrides
sensitivity
high electron mobility transistors
ambient temperature
field effect transistors
1 Citation (Scopus)

Analysis of GaN MagHEMTs

Faramehr, S., Jankovic, N. & Igic, P., 17 Aug 2018, In : Semiconductor Science and Technology. 33, 9, 095015.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
sensitivity
3 Citations (Scopus)
9 Downloads (Pure)

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Igic, P., Jankovic, N., Evans, J., Elwin, M., Batcup, S. & Faramehr, S., May 2018, In : IEEE Electron Device Letters. 39, 5, p. 746 - 748 3 p., 5.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Two dimensional electron gas
Magnetic fields
Electrons
Sensors
2017
2 Citations (Scopus)

Analysis of GaN HEMTs Switching Transients Using Compact Model

Faramehr, S. & Igic, P., 18 May 2017, In : IEEE Transactions on Electron Devices. 64, 7, p. 2900 - 2905 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Energy dissipation
Computer aided design
Networks (circuits)
Power HEMT
1 Citation (Scopus)

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Igic, P., Kryvchenkova, O., Faramehr, S., Batcup, S. & Jankovic, N., 14 Dec 2017, 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 55-59 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

SOI (semiconductors)
sensitivity
sensors
silicon
high electron mobility transistors
2 Citations (Scopus)

Operational frequency degradation induced trapping in scaled GaN HEMTs

Ubochi, B., Faramehr, S., Ahmeda, K., Igic, P. & Kalna, K., Apr 2017, In : Microelectronics Reliability. 71, p. 35-40 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
trapping
Cutoff frequency
degradation
1 Citation (Scopus)

Simulation of Solo GaN IGBTs

Faramehr, S. & Igic, P., 14 Dec 2017, IEEE 30th International Conference on Microelectronics (MIEL). IEEE, p. 75-78 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
bipolar transistors
punches
simulation
electrical faults

The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Ahmeda, K., Faramehr, S., Igic, P., Kalna, K., Duffy, S. J., Solatni, A. & Benbakhti, B., 5 Jan 2017, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, p. 203-206 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

heterojunctions
heating
polarization
transmission lines
electric contacts
2014

Design and simulation of a novel 1400V-4000V enhancement mode buried gate GaN HEMT for power applications

Faramehr, S., Kalna, K. & Igic, P., 26 Sep 2014, In : Semiconductor Science and Technology. 29, 11, p. 115020 7 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
Electric breakdown
25 Citations (Scopus)
5 Downloads (Pure)
Open Access
File
High electron mobility transistors
high electron mobility transistors
Hydrodynamics
hydrodynamics
traps
4 Citations (Scopus)

Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Faramehr, S., Kalna, K. & Igic, P., 26 Jun 2014, 29th International Conference on Microelectronics Proceedings - MIEL 2014. IEEE, p. 81-84 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

high electron mobility transistors
carrier mobility
spacers
transistors
traps
2 Citations (Scopus)

Modelling and optimization of GaN capped HEMTs

Faramehr, S., Igic, P. & Kalna, K., 29 Dec 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems . Breza, J., Donoval, D. & Vavrinský, E. (eds.). IEEE, p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

high electron mobility transistors
caps
optimization
electrical faults
simulation
2013
2 Citations (Scopus)
2 Downloads (Pure)

TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Faramehr, S., Igic, P. & Kalna, K., 24 Jan 2013, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems . IEEE, p. 11-14 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
high electron mobility transistors
trapping
traps
electron tunneling
electrons