Projects per year
Personal profile
Biography
Dr Faramehr received PhD in Electrical Engineering in advanced wide bandgap technologies for next generation of power electronic applications in 2015. Thereafter, he worked as post-doctoral researcher on developing world's 1st gallium nitride current sensors at Swansea University. In 2019, Soroush joined academics of Institute for Future Transport and Cities with focus on power semiconductors research.
He has 10-year experience in world-class power electronic R&D with a strong track record in publishing in leading international peer-reviewed journals, supervising students and writing research bids. Currently, he is PI at Coventry University for Innovate UK GaNTT and CoI on EPSRC GaN SPICe projects. He was PI on Innovate UK Cygnus, EPSRC IAA, CoI on EPSRC CS Hub feasibility study projects and Entrepreneurial Lead on ICURe GaN Magnetic Sensors.
Research Interests
His research interest lies in more efficient compound semiconductor electronic devices driven by automotive, space, aerospace, renewables and industrial electronics sectors to leave less carbon footprint on the environment. They include (ultra)-wide bandgap power semiconductor devices, magnetic sensors and vertical field effect transistors.
PhD Project
Available PhD positions:
- Gallium nitride sensors for power electronics
- Unlocking gallium oxide potential for power switches
- Silicon carbide sensors for power ICs
- Gallium nitride vertical field effect transistors
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Education/Academic qualification
Electrical Engineering, Doctorate, GaN HEMT for RF Power Applications, Swansea University
Award Date: 30 Apr 2015
Keywords
- TL Motor vehicles. Aeronautics. Astronautics
- QC Physics
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Collaborations and top research areas from the last five years
Projects
- 4 Finished
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Gallium Nitride Trench FET Development for Automotive Power Electronics
Faramehr, S. (Principal Investigator) & Igic, P. (Co-Investigator)
1/09/19 → 28/02/22
Project: Research
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The Harsh Environmental GaN Sensor
Faramehr, S. (Principal Investigator)
1/09/18 → 28/02/19
Project: Project at former HEI
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Solo-GaN 600V-1.2kV Power Trench MOSFET
Faramehr, S. (Co-Investigator)
1/08/18 → 31/01/19
Project: Research
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3D CFD modelling and experimental validation of conjugate heat transfer in wheel hub motors in micro-mobility vehicles
Mambazhasseri Divakaran, A., Gkanas, E., Jewkes, J., Shepherd, S., Jamal, W., Faramehr, S. & Abo-Serie, E., Jan 2025, In: Applied Thermal Engineering. 258, Part A, 15 p., 124430.Research output: Contribution to journal › Article › peer-review
Open AccessFile1 Citation (Scopus)36 Downloads (Pure) -
Study of GaN Hall Effect Magnetic Sensors
Marsic, V., Faramehr, S., Maini, I., Moran, D. & Igic, P., 5 Feb 2025, (E-pub ahead of print) In: IEEE Access. 13, p. 25622 - 25636 15 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile6 Downloads (Pure) -
GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration
Marsic, V., Faramehr, S., Fleming, J., Bhagat, R. & Igic, P., 22 Jan 2024, In: IEEE Access. 12, p. 13783 - 13794 12 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile2 Citations (Scopus)144 Downloads (Pure) -
Impact of V th Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P. & Idir, N., Sept 2024, In: IEEE Transactions on Power Electronics. 39, 9, p. 11625-11636 12 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile4 Citations (Scopus)71 Downloads (Pure) -
TCAD Modelling of Magnetic Hall Effect Sensors
Pandey, V., Marsic, V., Igic, P. & Faramehr, S., 10 Jul 2024, In: Inventions. 9, 4, 15 p., 72.Research output: Contribution to journal › Article › peer-review
Open AccessFile1 Citation (Scopus)34 Downloads (Pure)
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Utilising WBG in Power and Sensory Applications
Faramehr, S. (Speaker)
11 Nov 2019Activity: Talk or presentation › Invited talk
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Modelling of 2DEG and 2DHG in iGaN capped AlGaN/AlN/GaN HEMTs
Faramehr, S. (Speaker)
4 Jul 2014Activity: Talk or presentation › Oral presentation
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Modelling of Current Instability Issues in GaN HEMT
Faramehr, S. (Speaker)
4 Jul 2013Activity: Talk or presentation › Oral presentation
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Trapping Effects in 0.25μm Gate Length Al0.28Ga0.72N/GaN HEMT
Faramehr, S. (Speaker)
4 Jul 2012Activity: Talk or presentation › Oral presentation