Accepting PhD Students

20132022

Research output per year

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Personal profile

Biography

Dr Faramehr received PhD in Electrical Engineering in advanced wide bandgap technology for future generation of high power density applications in 2015. Thereafter, he worked as post-doctoral researcher on design, fabrication and characterisation of world's 1st gallium nitride current transducers at Swansea University. As researcher, he had the privilege of building R&D work relationship with well-recognised academics and world-leading industrialists. In 2019, Soroush joined academics of Institute for Future Transport and Cities with focus on power semiconductors research.

He has 10-year experience in world-class power electronics R&D with a strong track record in publishing in leading international peer-reviewed journals, supervising PhD projects and writing research bids. He has been PI on EPSRC IAA and CoI on EPSRC CS Hub feasibility study projects (ended Jan 2019). Currently, he is PI at Coventry University for two recently awarded Innovate UK projects (total value £2.6M).

Research Interests

His research interest lies in more efficient compound semiconductor electronic devices driven by automotive, space, aerospace, renewables and industrial electronics sectors to leave less footprint on the environment. They include wide bandgap power semiconductor devices, wide bandgap current transducers, ultra-wide bandgap materials and vertical field effect transistors.

PhD Project

Available PhD positions:

  • Gallium nitride sensors for power electronics
  • Unlocking gallium oxide potential for power switches
  • Silicon carbide sensors for power ICs
  • Gallium nitride vertical field effect transistors

Online adverts:

https://www.findaphd.com/phds/project/vertical-gan-power-trench-mosfet/?p110098

https://www.findaphd.com/phds/project/gan-current-sensors-for-advanced-power-electronics/?p110326

Education/Academic qualification

Electrical Engineering, Doctorate, Swansea University

Keywords

  • TL Motor vehicles. Aeronautics. Astronautics
  • QC Physics

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Projects

Research Output

  • 8 Conference proceeding
  • 8 Article

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr, S., Poluri, N., Igic, P., Jankovic, N. & De Souza, M. M., Oct 2019, In : IEEE Transactions on Electron Devices. 66, 10, p. 4367 - 4372 6 p.

Research output: Contribution to journalArticle

Open Access
File
  • 21 Downloads (Pure)

    GaN Current Transducers for Harsh Environments

    Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding

  • Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

    Thomas, B., Faramehr, S., Moody, D., Evans, J., Elwin, M. & Igic, P., Apr 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1937 - 1941 5 p., 8663610.

    Research output: Contribution to journalArticle

    Open Access
    File
  • 2 Citations (Scopus)
    24 Downloads (Pure)

    Analysis of GaN MagFETs compatible with RF power technology

    Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding

    Open Access
    File
  • 6 Downloads (Pure)

    Analysis of GaN MagHEMTs

    Faramehr, S., Jankovic, N. & Igic, P., 17 Aug 2018, In : Semiconductor Science and Technology. 33, 9, 095015.

    Research output: Contribution to journalArticle

  • 2 Citations (Scopus)

    Activities

    • 3 Oral presentation
    • 1 Invited talk

    Utilising WBG in Power and Sensory Applications

    Soroush Faramehr (Speaker)
    11 Nov 2019

    Activity: Talk or presentationInvited talk

    Modelling of 2DEG and 2DHG in iGaN capped AlGaN/AlN/GaN HEMTs

    Soroush Faramehr (Speaker)
    4 Jul 2014

    Activity: Talk or presentationOral presentation

    Modelling of Current Instability Issues in GaN HEMT

    Soroush Faramehr (Speaker)
    4 Jul 2013

    Activity: Talk or presentationOral presentation

    Trapping Effects in 0.25μm Gate Length Al0.28Ga0.72N/GaN HEMT

    Soroush Faramehr (Speaker)
    4 Jul 2012

    Activity: Talk or presentationOral presentation