Accepting PhD Students

20132022
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Personal profile

Biography

Dr Faramehr received PhD in Electrical Engineering in advanced wide bandgap technology for future generation of high power density applications in 2015. Thereafter, he worked as post-doctoral researcher on design, fabrication and characterisation of world's 1st gallium nitride current transducers at Swansea University. As researcher, he had the privilege of building R&D work relationship with well-recognised academics and world-leading industrialists. In 2019, Soroush joined academics of Institute for Future Transport and Cities with focus on power semiconductors research.

He has 10-year experience in world-class power electronics R&D with a strong track record in publishing in leading international peer-reviewed journals, supervising PhD projects and writing research bids. He has been PI on EPSRC IAA and CoI on EPSRC CS Hub feasibility study projects (ended Jan 2019). Currently, he is PI at Coventry University for two recently awarded Innovate UK projects (total value £2.6M).

Research Interests

His research interest lies in more efficient compound semiconductor electronic devices driven by automotive, space, aerospace, renewables and industrial electronics sectors to leave less footprint on the environment. They include wide bandgap power semiconductor devices, wide bandgap current transducers, ultra-wide bandgap materials and vertical field effect transistors.

PhD Project

Available PhD positions:

  • Gallium nitride sensors for power electronics
  • Unlocking gallium oxide potential for power switches
  • Silicon carbide sensors for power ICs
  • Gallium nitride vertical field effect transistors

Online adverts:

https://www.findaphd.com/phds/project/vertical-gan-power-trench-mosfet/?p110098

https://www.findaphd.com/phds/project/gan-current-sensors-for-advanced-power-electronics/?p110326

Education/Academic qualification

Electrical Engineering, Doctorate, Swansea University

Keywords

  • TL Motor vehicles. Aeronautics. Astronautics
  • QC Physics

Fingerprint Dive into the research topics where Soroush Faramehr is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 1 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Gallium nitride Engineering & Materials Science
Magnetic sensors Engineering & Materials Science
Electric breakdown Engineering & Materials Science
Magnetic field effects Engineering & Materials Science
Transducers Engineering & Materials Science
Field effect transistors Engineering & Materials Science
Cutoff frequency Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Projects 2018 2022

Research Output 2013 2019

  • 8 Conference proceeding
  • 8 Article
7 Downloads (Pure)

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr, S., Poluri, N., Igic, P., Jankovic, N. & De Souza, M. M., Oct 2019, In : IEEE Transactions on Electron Devices. 66, 10, p. 4367 - 4372 6 p.

Research output: Contribution to journalArticle

Open Access
File
Gallium nitride
High electron mobility transistors
Transducers
Magnetic flux
Geometry

GaN Current Transducers for Harsh Environments

Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

gallium nitrides
high electron mobility transistors
ambient temperature
transducers
sensitivity
1 Citation (Scopus)
15 Downloads (Pure)

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Thomas, B., Faramehr, S., Moody, D., Evans, J., Elwin, M. & Igic, P., 8 Mar 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1937 - 1941 5 p., 8663610.

Research output: Contribution to journalArticle

Open Access
File
Magnetic sensors
Gallium nitride
Magnetic field effects
Field effect transistors
Temperature
4 Downloads (Pure)

Analysis of GaN MagFETs compatible with RF power technology

Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Open Access
File
gallium nitrides
sensitivity
high electron mobility transistors
ambient temperature
field effect transistors
1 Citation (Scopus)

Analysis of GaN MagHEMTs

Faramehr, S., Jankovic, N. & Igic, P., 17 Aug 2018, In : Semiconductor Science and Technology. 33, 9, 095015.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
sensitivity

Activities 2012 2019

  • 3 Oral presentation
  • 1 Invited talk

Utilising WBG in Power and Sensory Applications

Soroush Faramehr (Speaker)
11 Nov 2019

Activity: Talk or presentationInvited talk

Modelling of 2DEG and 2DHG in iGaN capped AlGaN/AlN/GaN HEMTs

Soroush Faramehr (Speaker)
4 Jul 2014

Activity: Talk or presentationOral presentation

Modelling of Current Instability Issues in GaN HEMT

Soroush Faramehr (Speaker)
4 Jul 2013

Activity: Talk or presentationOral presentation

Trapping Effects in 0.25μm Gate Length Al0.28Ga0.72N/GaN HEMT

Soroush Faramehr (Speaker)
4 Jul 2012

Activity: Talk or presentationOral presentation