Soroush Faramehr

Personal profile

Biography

Dr Faramehr received PhD in Electrical Engineering in advanced wide bandgap technology for future generation of high power density applications in 2015. Thereafter, he worked as post-doctoral researcher on design, fabrication and characterisation of world's 1st gallium nitride current transducers at Swansea University. As researcher, he had the privilege of building R&D work relationship with well-recognised academics and world-leading industrialists. In 2019, Soroush joined academics of Institute for Future Transport and Cities with focus on power semiconductors research.

He has 10-year experience in world-class power electronics R&D with a strong track record in publishing in leading international peer-reviewed journals, supervising PhD projects and writing research bids. He has been PI on EPSRC IAA and CoI on EPSRC CS Hub feasibility study projects (ended Jan 2019). Currently, he is PI at Coventry University for two recently awarded Innovate UK projects (total value £2.6M).

Research Interests

His research interest lies in more efficient compound semiconductor electronic devices driven by automotive, space, aerospace, renewables and industrial electronics sectors to leave less footprint on the environment. They include wide bandgap power semiconductor devices, wide bandgap current transducers, ultra-wide bandgap materials and vertical field effect transistors.

PhD Project

Available PhD positions:

Gallium nitride sensors for power electronics
Unlocking gallium oxide potential for power switches
Silicon carbide sensors for power ICs
Gallium nitride vertical field effect transistors

Online adverts:

https://www.findaphd.com/phds/project/vertical-gan-power-trench-mosfet/?p110098

https://www.findaphd.com/phds/project/gan-current-sensors-for-advanced-power-electronics/?p110326

Education/Academic qualification

Electrical Engineering, Doctorate, Swansea University

Keywords

TL Motor vehicles. Aeronautics. Astronautics
QC Physics

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1 Similar Profiles

High electron mobility transistors Engineering & Materials Science

Gallium nitride Engineering & Materials Science

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Electric breakdown Engineering & Materials Science

Magnetic field effects Engineering & Materials Science

Transducers Engineering & Materials Science

Field effect transistors Engineering & Materials Science

Cutoff frequency Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Projects 2018 2022

1 Active
2 Finished

Gallium Nitride Trench FET Development for Automotive Power Electronics

Faramehr, S. & Igic, P.

1/09/19 → 28/02/22

Project: Research

The Harsh Environmental GaN Sensor

Faramehr, S.

1/09/18 → 28/02/19

Project: Project at former HEI

Solo-GaN 600V-1.2kV Power Trench MOSFET

Faramehr, S.

1/08/18 → 31/01/19

Project: Research

Research Output 2013 2019

8 Conference proceeding
8 Article

1 Downloads (Pure)

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr, S., Poluri, N., Igic, P., Jankovic, N. & De Souza, M. M., 30 Aug 2019, In : IEEE Transactions on Electron Devices. (In-press), p. (In-press) 6 p.

Research output: Contribution to journal › Article

Open Access

File

Gallium nitride

High electron mobility transistors

Transducers

Magnetic flux

Geometry

GaN Current Transducers for Harsh Environments

Faramehr, S., Jankovic, N. & Igic, P., 22 Aug 2019, 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, p. 1985-1988 4 p.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding

gallium nitrides

high electron mobility transistors

ambient temperature

transducers

sensitivity

1 Citation (Scopus)

12 Downloads (Pure)

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Thomas, B., Faramehr, S., Moody, D., Evans, J., Elwin, M. & Igic, P., 8 Mar 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1937 - 1941 5 p., 8663610.

Research output: Contribution to journal › Article

Open Access

File

Magnetic sensors

Gallium nitride

Magnetic field effects

Field effect transistors

Temperature

Analysis of GaN MagFETs compatible with RF power technology

Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M. & Igic, P., 2 Jul 2018, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, p. 0050-0053 4 p.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding

Open Access

File

gallium nitrides

sensitivity

high electron mobility transistors

ambient temperature

field effect transistors

1 Citation (Scopus)