Projects per year
Personal profile
Biography
Dr Soroush Faramehr received his PhD in Electrical Engineering in 2015, specialising in advanced wide bandgap technologies for next-generation power electronic applications. He subsequently worked as a postdoctoral researcher at Swansea University.
In 2019, Dr Faramehr joined the Institute for Future Transport and Cities at Coventry University, focusing on research in power semiconductor technologies.
He brings over 10 years of experience in world-class R&D in power electronics, with a strong track record in publishing in leading international peer-reviewed journals, supervising postgraduate researchers, and securing competitive research funding.
Research Interests
Dr Faramehr’s research interests focus on the development of high-efficiency compound semiconductor electronic devices to support the decarbonisation of key sectors, including automotive, space, aerospace, renewable energy, and industrial electronics.
Completed PGR Students
Mr Xuyang Lu - Switching behaviour analysis of GaN-HEMTs in power converters considering Vth shift and gate driver configuration
Mr Arun Mambazhasseri Divakaran - Applying Advanced Thermal Management And Optimisation Methods To E-Scooters And E-Motorbikes
Current PGR Supervision
Miss Louiza Mavrovounioti - Methods For Inferring Junction Temperature In IGBT Inverters
Mr Constantin-Lucian Radu - Modelling of inverter EMC with fast-switching wide band-gap power semiconductor devices
Ms Vartika Pandey - Enabling Second Life Usage of EV Batteries
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Education/Academic qualification
Electrical Engineering, Doctorate, GaN HEMT for RF Power Applications, Swansea University
Award Date: 30 Apr 2015
Keywords
- TL Motor vehicles. Aeronautics. Astronautics
- QC Physics
Fingerprint
Dive into the research topics where Soroush Faramehr is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
External collaboration on country/territory level for the past five years. Dive into details by clicking on the dots or
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High-Voltage fast-charging efficient Electric vehicle Powertrains
Faramehr, S. (Co-Investigator) & Igic, P. (Principal Investigator)
1/02/25 → 28/02/29
Project: Research
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Gallium Nitride Smart Power Integrated Circuit Technology
Faramehr, S. (Co-Investigator) & Igic, P. (Principal Investigator)
30/09/21 → 30/09/25
Project: Research
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Scalable Delivery of Applied Power Electronics Training
Faramehr, S. (Co-Investigator) & Igic, P. (Principal Investigator)
30/09/22 → 31/12/24
Project: Research
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Gallium Nitride Trench FET Development for Automotive Power Electronics
Faramehr, S. (Principal Investigator) & Igic, P. (Co-Investigator)
1/09/19 → 28/02/22
Project: Research
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3D CFD modelling and experimental validation of conjugate heat transfer in wheel hub motors in micro-mobility vehicles
Mambazhasseri Divakaran, A., Gkanas, E., Jewkes, J., Shepherd, S., Jamal, W., Faramehr, S. & Abo-Serie, E., Jan 2025, In: Applied Thermal Engineering. 258, Part A, 15 p., 124430.Research output: Contribution to journal › Article › peer-review
Open AccessFile2 Citations (Scopus)53 Downloads (Pure) -
Experimental Low-Cost Magnetic Scanning for Non-Destructive Testing With Hall Sensors: Determining Material’s Thickness
Marsic, V., Igic, P., Pandey, V., Zhou, W. & Faramehr, S., 11 Apr 2025, In: IEEE Access. 13, p. 65105-65120 16 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile33 Downloads (Pure) -
Study of GaN Hall Effect Magnetic Sensors
Marsic, V., Faramehr, S., Maini, I., Moran, D. & Igic, P., 5 Feb 2025, (E-pub ahead of print) In: IEEE Access. 13, p. 25622 - 25636 15 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile1 Citation (Scopus)26 Downloads (Pure) -
GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration
Marsic, V., Faramehr, S., Fleming, J., Bhagat, R. & Igic, P., 22 Jan 2024, In: IEEE Access. 12, p. 13783 - 13794 12 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile3 Citations (Scopus)196 Downloads (Pure) -
Impact of V th Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P. & Idir, N., Sept 2024, In: IEEE Transactions on Power Electronics. 39, 9, p. 11625-11636 12 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile7 Citations (Scopus)87 Downloads (Pure)
Activities
- 1 Invited talk
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Utilising WBG in Power and Sensory Applications
Faramehr, S. (Speaker)
11 Nov 2019Activity: Talk or presentation › Invited talk