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Research Output 2011 2018

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2018

Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Lophitis, N., Antoniou, M., Vemulapati, U. R., Vobecky, J., Badstuebner, U., Wikstrom, T., Stiasny, T., Rahimo, M. T. & Udrea, F. Sep 2018 In : IEEE Electron Device Letters. 39, 9, p. 1342-1345 4 p.

Research output: Contribution to journalArticle

Open Access
File
Controllability
Thyristors
Temperature
Diodes
2017
1 Citations

On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept

Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Vemulapati, U. R. & Badstuebner, U. 22 Jun 2017 In : IEEE Electron Device Letters. 38, 8, p. 1063-1066 4 p.

Research output: Contribution to journalArticle

Open Access
File
Insulated gate bipolar transistors (IGBT)
Anodes
Cathodes
Fabrication
Thyristors

Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation

Arvanitopoulos, A., Lophitis, N., Gyftakis, K. N., Perkins, S. & Antoniou, M. 19 Sep 2017 In : Semiconductor Science and Technology. 32, 10, 104009

Research output: Contribution to journalArticle

Open Access
File
2016
2 Citations

New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Lophitis, N., Antoniou, M., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J., Rahimo, M. & Udrea, F. 24 Feb 2016 In : IEEE Electron Device Letters. 37, 4, p. 467 - 470

Research output: Contribution to journalArticle

Open Access
File
Controllability
Thyristors
Failure analysis
Diodes
Temperature
2015
4 Citations

Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Lophitis, N., Antoniou, M., Udrea, F., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J. & Rahimo, M. 22 May 2015 In : Electron Devices. 62, 7, p. 2263 - 2269 7 p., 7112118

Research output: Contribution to journalArticle

Open Access
File
Controllability
Thyristors
7 Citations

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G. & Udrea, F. 15 May 2015 In : Electron Device Letters. 36, 8, p. 823-825 3 p.

Research output: Contribution to journalArticle

Open Access
File
Insulated gate bipolar transistors (IGBT)
Plasmas
Cathodes
2014
6 Citations

Parameters influencing the maximum controllable current in gate commutated thyristors

Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikström, T. & Vobecky, J. May 2014 In : Circuits, Devices & Systems. 8, 3, p. 221-226

Research output: Contribution to journalArticle

Open Access
Thyristors
2013
4 Citations

Gate commutated thyristor with voltage independent maximum controllable current

Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Rahimo, M. T., Arnold, M., Wikstroem, T. & Vobecky, J. 2013 In : IEEE Electron Device Letters. 34, 8, p. 954-956 3 p., 6547666

Research output: Contribution to journalArticle

Thyristors
Electric potential
Physics
12 Citations

The destruction mechanism in GCTs

Lophitis, N., Antoniou, M., Udrea, F., Bauer, F. D., Nistor, I., Arnold, M., Wikstrom, T. & Vobecky, J. 2013 In : Electron Devices. 60, 2, p. 819-826 8 p., 6410404

Research output: Contribution to journalArticle

Open Access
File
Thyristors