Research Output 2011 2018

Filter
Conference proceeding
2018

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes

Arvanitopoulos, A., Perkins, S., Jennings, M., Antoniou, M., Gyftakis, K. N. & Lophitis, N. 4 Feb 2018 (Accepted/In press) 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). IEEE, Vol. (in press), p. (in press)

Research output: Research - peer-reviewConference proceeding

The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

Perkins, S., Arvanitopoulos, A., Lophitis, N. & Gyftakis, K. N. 4 Feb 2018 (Accepted/In press) 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Xi’an, Shaanxi, China : IEEE, Vol. (in press), p. (in press)

Research output: Research - peer-reviewConference proceeding

Gallium nitride
Silicon
Temperature
High electron mobility transistors
Temperature measurement
2017

3C-SiC material parameters for accurate TCAD modeling and simulation

Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Antoniou, M. & Lophitis, N. May 2017 The 10th International Conference on Silicon Epitaxy and Heterostructures: ICSI-10. p. 115-116 2 p.

Research output: Research - peer-reviewConference proceeding

Silicon carbide
Computer aided design
Gallium nitride
Electronics industry
Power electronics

A comprensive Comparison of the Static Performance of Commercial GaN-on-Si Devices

Perkins, S., Arvanitopoulos, A., Gyftakis, K. N. & Lophitis, N. 30 Oct 2017 The 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2017). IEEE, p. 177-184

Research output: Research - peer-reviewConference proceeding

Open Access
File
gallium nitrides
silicon
high electron mobility transistors
silicon oxides
metal oxide semiconductors

Breakdown resistance analysis of traction motor winding insulation under thermal ageing

Gyftakis, K. N., Panagiotou, P. A., Lophitis, N., Howey, D. A. & McCulloch, M. D. 3 Nov 2017 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January, p. 5819-5825 7 p. 8096964

Research output: Research - peer-reviewConference proceeding

Open Access
File
Traction motors
Thermal aging
Breakdown
Thermal Stress
Thin Films

Physical parameterisation of 3C- Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC

Arvanitopoulos, A., Belanche Guadas, M., Perkins, S., Lophitis, N., Gyftakis, K. N. & Antoniou, M. 9 Oct 2017 IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives. IEEE, Vol. (in press), p. (in press)

Research output: Research - peer-reviewConference proceeding

Open Access
File
Parameterization
Silicon carbide
Schottky barrier diodes
Computer aided design
Physical properties
2014
1 Citations

The Stripe Fortified GCT: A new GCT design for maximizing the controllable current

Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Wikstrom, T., Vobecky, J. & Rahimo, M. 17 Jul 2014 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, p. 123 - 126 4 p.

Research output: ResearchConference proceeding

Open Access
File
Marketing
Servers
2012
6 Citations

Experimentally validated three dimensional GCT wafer level simulations

Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikström, T. & Vobecky, J. 2012 Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. IEEE, p. 349-352 4 p. 6229093

Research output: Research - peer-reviewConference proceeding

Open Access
File
Thyristors
Phase control
2011
3 Citations

Turn-off failure mechanism in large area IGCTs

Lophitis, N., Antoniou, M., Udrea, F., Wikstrom, T. & Nistor, I. 2011 2011 International Semiconductor Conference, CAS 2011 Proceedings. Vol. 2, p. 361-364 4 p. 6095817

Research output: Research - peer-reviewConference proceeding

Open Access
File
thyristors
Thyristors
destruction
wafers
current distribution