• 102 Citations
  • 6 h-Index
20092019
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Personal profile

Research Interests

Ke Li is Assistant Professor in power electronics in Centre for Advanced Low-Carbon Propulsion Systems (C-ALPS), Institute for Future Transport and Cities. His area of research and teaching is on the application of wide bandgap (WBG) power semiconductor devices (silicon carbide, SiC and gallium nitire, GaN) for e-mobility, which includes the characterisation, modelling of WBG devices, the integration of WBG devices into power electronics systems to increase power efficiency and power density, and power electronics systems electro-thermal and electromagnetic modelling and electromagnetic inteference mitigation.

Ke Li received BEng and MEng degrees in electrical engineering from Southwest Jiaotong University, China, in 2008 and 2011 respectively, the Eng.degree from Ecole Centrale de Marseille, France, in 2011 and PhD degree in electrical engineering from University of Lille, France, in 2014. From 2015 to 2019, he was Research Fellow at the University of Nottingham, UK.

Ke Li is Vehicle Power Propulsion Technical Committee member of IEEE Vehicle Technology Society, where he works on the activities for the development of more eco-efficient propulsion systems for any vehicles. He also serves as session chair of power electronics in IEEE conferences and frequenct reviewer of IEEE transactions and journals.

Ke Li speaks English, Chinese and French. He is looking forward to meeting students who are passionate in his research area and in e-mobility.

Fingerprint Dive into the research topics where Ke Li is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Research Output 2009 2019

  • 102 Citations
  • 6 h-Index
  • 8 Conference proceeding
  • 6 Article

Experimental investigation of gan transistor current collapse on power converter efficiency for electrical vehicles

Li, K., Videt, A., Idir, N., Evans, P. & Johnson, M., 1 Oct 2019, 2019 IEEE Vehicle Power and Propulsion Conference, VPPC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 6 p. 8952479. (2019 IEEE Vehicle Power and Propulsion Conference, VPPC 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Power Converter
Power converters
Experimental Investigation
Transistors
efficiency
15 Citations (Scopus)

Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance

Li, K., Evans, P. L. & Johnson, C. M., 1 Jun 2018, In : IEEE Transactions on Power Electronics. 33, 6, p. 5262-5273 12 p.

Research output: Contribution to journalArticle

Open Access
File
Gallium nitride
High electron mobility transistors
Networks (circuits)
Power converters
SPICE
5 Citations (Scopus)
2 Downloads (Pure)

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module with Embedded Decoupling Capacitors

Yang, L., Li, K., Dai, J., Corfield, M., Harris, A., Paciura, K., O Brien, J. & Johnson, C. M., Dec 2018, In : IEEE Transactions on Power Electronics. 33, 12, p. 10594-10601 8 p., 8318641.

Research output: Contribution to journalArticle

Open Access
File
Silicon carbide
Capacitors
MOSFET devices
Inductance
Power MOSFET

Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise

Li, K., Evans, P. & Johnson, M., 13 Jun 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia . Institute of Electrical and Electronics Engineers Inc., p. 213-219 7 p. 8734589. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Substrate
Minimise
Substrates
Bridge circuits
Power converters
8 Citations (Scopus)
Open Access
File
Gallium nitride
MOSFET devices
High electron mobility transistors
Silicon carbide
Switching circuits